Thin-film ambipolar logic

ABSTRACT

An ambipolar electronic device is disclosed. The device may include a field-effect transistor (FET), which may have a handle substrate layer, two contacts and an inorganic crystalline layer between the handle substrate layer and the contacts. The inorganic crystalline layer may have a doped channel region between the contacts. The FET may also have a dielectric layer between the contacts, attached to the inorganic crystalline layer, and a gate layer, attached to the dielectric layer. The FET may conduct current, in response to a first gate voltage applied to the gate layer, using electrons as a majority carrier, along the length of the channel region between the contacts. The FET may also conduct current, in response to a second gate voltage applied to the gate layer, using holes as a majority carrier, along the length of the channel region between the contacts.

BACKGROUND

The present disclosure generally relates to field-effect transistors(FETs). In particular, this disclosure relates to FETs fabricated fromthin-film inorganic crystalline layers and that have ambipolarproperties.

A field-effect transistor (FET) may generally be a transistor that usesan electric field to control the shape and hence the conductivity of achannel of one type of charge carrier in a semiconductor material. FETsmay be unipolar transistors as they may involve single-carrier-typeoperation. FETs may be majority-charge-carrier devices, in which thecurrent is carried predominantly by majority carriers. A FET device mayconsist of an active channel through which charge carriers, electrons orholes, flow from a source to a drain. Source and drain terminalconductors may be connected to the semiconductor through ohmic contacts.The conductivity of the channel may be a function of the electricpotential applied across the gate and source terminals.

Complementary metal-oxide-semiconductor (CMOS) is a term which may referto both a digital circuit design style and a corresponding family ofprocesses used to implement that style of circuitry in the fabricationof integrated circuits (chips). A digital design style including CMOStechnology may use complementary and symmetrical pairs of P-type andN-type metal oxide semiconductor field-effect transistors (MOSFETs)connected together to form circuits that may perform logical functions.The phrase “metal-oxide-semiconductor” may refer to the physicalstructure of certain field-effect transistors (FETs), having anelectrically conductive gate electrode placed on top of an oxideinsulator, which in turn is formed on top of a semiconductor material.

CMOS technology may be used in microprocessors, microcontrollers, staticrandom-access memory (SRAM), and other types of digital logic circuits.CMOS technology may also be used for various types of analog circuitssuch as image sensors, data converters, and integrated communicationtransceivers. Commercial CMOS products may include integrated circuitscomposed of billions of transistors of both P and N types, integratedand interconnected on a rectangular silicon die.

SUMMARY

Various aspects of the present disclosure may be useful for providinglow-cost, structurally flexible ambipolar field-effect transistor (FET)devices for use in large area electronic applications such as displays,sensors and smart user interfaces. An electronic device configuredaccording to embodiments of the present disclosure may have lower cost,more robust performance, and simplified manufacturing relative to othertechnologies used in the fabrication of large area electronic devices.

Embodiments may be directed towards an ambipolar electronic device. Theambipolar electronic device may include a first field-effect transistor(FET). The first FET may have a handle substrate layer, a first contact,a second contact, and an inorganic crystalline layer formed between atop surface of the handle substrate layer and the first and secondcontacts. The inorganic crystalline layer may have a doped channelregion with a length extending between the first contact and the secondcontact. The first FET may also have a dielectric layer attached,between the first contact and the second contact, to a top surface ofthe inorganic crystalline layer, and may have a gate layer, attached toa top surface of the dielectric layer. The first FET may be configuredto conduct current, in response to a first gate voltage applied to thegate layer and using electrons as a majority carrier, along the lengthof the channel region between the first contact and the second contact.The first FET may also be configured to conduct current, in response toa second gate voltage applied to the gate layer and using holes as amajority carrier, along the length of the channel region between thefirst contact and the second contact.

Embodiments may also be directed towards an ambipolar electronic device.The ambipolar electronic device may include a first field-effecttransistor (FET). The a first FET may have a buried insulator layerattached to a top surface of handle substrate layer, a first contact, asecond contact, and an inorganic crystalline layer formed between a topsurface of the buried insulator layer and the first and second contacts.The inorganic crystalline layer may also have a doped channel regionwith a length extending between the first contact and the secondcontact. The first FET may also have an insulating layer attached,between the first contact and the second contact, to a top surface ofthe inorganic crystalline layer, and may have metallic layer formedbelow a bottom surface of the buried insulator layer. The first FET maybe configured to conduct current, in response to a first gate voltageapplied to the metallic layer and using electrons as a majority carrier,along the length of the channel region between the first contact and thesecond contact. The first FET may also be configured to conduct current,in response to a second gate voltage applied to the metallic layer andusing holes as a majority carrier, along the length of the channelregion between the first contact and the second contact.

Embodiments may also be directed towards a method for manufacturing anambipolar field-effect transistor (FET) device. The method may includeforming a buried insulator layer on a handle substrate layer, forming aninorganic crystalline layer on the buried insulator layer, anddepositing a metallic layer on a bottom surface of the handle substratelayer. The method may also include forming a first electricallyconductive contact and a second electrically conductive contact on a topsurface of the inorganic crystalline layer, depositing a dielectriclayer on a top surface of the inorganic crystalline layer, anddepositing an electrically conductive material between the firstelectrically conductive contact and the second electrically conductivecontact, to form a metal layer. The metal layer may be configured tofunction as a gate of the ambipolar FET by causing, in response to afirst gate voltage and using electrons as a majority carrier, current tobe conducted, along a length of a channel region between a first contactand a second contact. The metal layer may also be configured to functionas a gate of the ambipolar FET by causing, in response to a second gatevoltage and using holes as a majority carrier, current to be conducted,along the length of the channel region between the first contact and thesecond contact.

Aspects of the various embodiments may be used to limit powerconsumption, limit cost and enhance the performance of electronicdevices used in large area and wearable electronics applications.Aspects of the various embodiments may also be useful for providingelectronic switching devices for use with large area electronicapplications that are stable over time, environmental conditions andoperational conditions, by using existing and proven crystalline siliconFET fabrication processes, and thin-film layer removal and bondingtechnologies.

The above summary is not intended to describe each illustratedembodiment or every implementation of the present disclosure.

BRIEF DESCRIPTION OF THE DRAWINGS

The drawings included in the present application are incorporated into,and form part of, the specification. They illustrate embodiments of thepresent disclosure and, along with the description, serve to explain theprinciples of the disclosure. The drawings are only illustrative ofcertain embodiments and do not limit the disclosure.

FIG. 1 depicts a cross-sectional view of two ambipolar field-effecttransistors (FETs) formed on a handle substrate layer and configured tobe controlled by a gate voltage applied to a gate layer, according toembodiments of the present disclosure.

FIG. 2 depicts a cross-sectional view of two ambipolar FETs formed on aburied insulator layer and configured to be controlled by a gate voltageapplied to a gate layer, according to embodiments of the presentdisclosure.

FIG. 3 depicts a cross-sectional view of two ambipolar FETs formed on aburied insulator layer and configured to be controlled by a gate voltageapplied to a metal layer, according to embodiments of the presentdisclosure.

FIG. 4 depicts a cross-sectional view of two ambipolar FETs formed on aburied insulator layer and configured to be controlled by a gate voltageapplied to a patterned metal layer, according to embodiments of thepresent disclosure.

FIG. 5 includes eight cross-sectional views illustrating the results ofprocess steps for fabricating ambipolar logic FETs, according toembodiments.

FIG. 6 is a flow diagram illustrating steps for manufacturing ambipolarlogic devices, according to embodiments.

While the invention is amenable to various modifications and alternativeforms, specifics thereof have been shown by way of example in thedrawings and will be described in detail. It should be understood,however, that the intention is not to limit the invention to theparticular embodiments described. On the contrary, the intention is tocover all modifications, equivalents, and alternatives falling withinthe spirit and scope of the invention.

In the drawings and the Detailed Description, like numbers generallyrefer to like components, parts, steps, and processes.

DETAILED DESCRIPTION

Certain embodiments of the present disclosure can be appreciated in thecontext of providing structurally flexible, cost-effective ambipolarfield-effect transistor (FET) devices to “large area” electronic devicessuch as displays and sensors which may be used to provide interactionbetween electronic devices and device users. Such electronic devices mayinclude, but are not limited to laptop computers, e-books and scanners.While not necessarily limited thereto, embodiments discussed in thiscontext can facilitate an understanding of various aspects of thedisclosure. Certain embodiments may also be directed towards otherequipment and associated applications, such as providing structurallyflexible, cost-effective ambipolar FET devices to electronic equipmentsuch as flexible and/or wearable electronic devices, which may be usedin a wide variety of personal and health-related applications. Suchdevices may include, but are not limited to personal communication andhealth monitoring devices and other types of special-purposeelectronics. Embodiments may also be directed towards medical devicesand sensors to facilitate monitoring of physiological functions andindicators (e.g., blood pressure, pulse rate).

A unipolar field-effect transistor (FET), for example, an N-channel FET(NFET) or a P-channel FET (PFET) may be operated by applying agate-source voltage (V_(GS)) between source (S) and gate (G) terminals.For example, applying a positive V_(GS) to an NFET device may allow acurrent of NFET majority carriers (electrons) to flow from the NFET'ssource terminal to its drain terminal. Similarly, applying a negativeV_(GS) to a PFET device may allow a current of PFET majority carriers(holes) to flow from the PFET's source terminal to its drain terminal.

Generally, each type of unipolar FET (NFET and PFET) may respond byallowing current to flow from its source terminal to its drain terminalin response to only one polarity (positive or negative) of V_(GS);application of a V_(GS) of the opposite polarity to the unipolar devicemay not produce an appreciable source-drain current flow.

An ambipolar FET device may generally be operated in N-channel andP-channel “modes” and may be used to replace both and an N-channel and aP-channel FET in certain applications. An ambipolar FET may respond tothe application of either a positive or a negative V_(GS) polarity byallowing a current to flow from one of the FET's source/drain terminalsto the other one of the FET's source/drain terminals. A V_(GS) of onepolarity may enable current flow in one direction between source/drainterminals, and a V_(GS) of the opposite polarity may enable current flowin an opposite direction. For simplicity of discussion, the “drain” and“source” terminals will be referred to herein simply as “contacts”.

Thin-film crystalline inorganic ambipolar FET devices may be useful inproviding relatively low-cost, high-performance digital switchingdevices for flexible and/or large area electronic applications such asflat-panel displays, wearable computing devices and medical devices. Acrystalline structure of an ambipolar FET may have a higher carriermobility than other types of switching devices, such as organic oramorphous FETs, that are used for flexible and/or large area electronicapplications. A high carrier mobility may result in robust FETperformance, especially at high device operating frequencies. The use ofthin films in ambipolar FET manufacturing may result in flexible FETdevices that may be flexed without damage or disruption to electricallyactive layers. Ambipolar FET devices may be fabricated using a smallernumber of masks and process operations than to the number used fordevices including two unipolar (e.g., N-channel and P-channel) FETtypes. Limiting the number of masks and process operations used maylimit fabrication costs for devices employing ambipolar FETs, and mayprovide a cost advantage for ambipolar FET technology.

Certain embodiments relate to the fabrication of inorganic crystallineambipolar logic FETs. FIG. 1 depicts a cross-sectional view 100 of twofield-effect transistors (FETs) 102, 104 formed on a handle substratelayer 116 and configured to provide ambipolar functionality in responseto an input voltage applied to the V_(IN) terminal connected to gatelayers 122A, 122B, according to embodiments of the present disclosure.The thin-film inorganic crystalline FETs 102, 104 may both bemanufactured using a common set of process operations, and may be usefulin certain applications as structurally flexible FETs with ambipolarcharacteristics. Ambipolar FETs 102, 104 may be a useful andcost-effective replacement for unipolar (e.g., N-channel and P-channel)FETs in certain applications involving large area, structurally flexibleelectronic devices. Ambipolar FETs 102, 104 may have higher channelregion mobility and higher performance than large area, flexible FETsmanufactured with organic or amorphous materials.

Each FET (102, 104) may include an inorganic crystalline layer (114A,114B, respectively) formed on a top of the handle substrate layer 116.Contacts (124A, 124B and 124C, 124D, respectively) and dielectric layers(120A, 120B, respectively) may be formed on and attached to the topsurface of the inorganic crystalline layers (114A, 114B, respectively).Dielectric layers (120A, 120B, respectively) may be formed between therespective first and second contacts (124A, 124B and 124C, 124D). Gates(122A, 122B) may be formed on a top surface of the dielectric layers(120A, 120B, respectively).

FETs 102 and 104 are depicted in FIG. 1 as configured to form aninverter, with the FETs having a common “drain” connection (contacts124B, 124C) of V_(OUT), a common gate connection to V_(IN), and contacts124A connected to a supply voltage, V_(DD), and contact 124D connectedto GND. In certain embodiments, additional ambipolar FET devices may beconfigured to form logic functions such as gates (e.g., AND, NAND, OR,NOR) and data storage functions such as latches, flip-flops andregisters.

In certain embodiments the handle substrate layer 116 may beelectrically insulative, and may include an undoped semiconductormaterial such as crystalline silicon. Handle substrate layer 116 may bea structurally flexible material such as plastic, commercial photo paperor ultra-thin (i.e., 100 μm) flexible glass. According to embodiments,the thickness of the handle substrate layer 116 may not affect theelectrical performance of FETs 102, 104.

In embodiments the inorganic crystalline layers (114A, 114B) may includesingle-crystalline (mono-crystalline) elements such as (predominantly)silicon, germanium or silicon-germanium. The inorganic crystallinelayers (114A, 114B) may include greater than 50% crystalline elementssuch as silicon and germanium, in combination with a relatively smallportion (generally less than 1 percent) of impurities and other elementsused as dopants (e.g., boron, arsenic and phosphorus). For example, incertain embodiments, substantially all of the crystalline material, orgreater than 99%, may be crystalline elements. In particular embodimentsgreater than 99.5% of crystalline material may be crystalline elements.

In certain embodiments the crystalline layers (114A, 114B) may includepoly-crystalline (multi-crystalline) materials. According toembodiments, a thickness of the inorganic crystalline layers (114A,114B) may be between 5 nm and 500 nm. The mobility of the channel regionformed in crystalline layer 114 may be in a range between 5 cm²/Vs and500 cm²/Vs, consistent with mobilities of unipolar (N-channel andP-channel) FET devices.

Application of a (first or second) gate voltage (V_(GS)) to a gate layer(e.g., 122A), may result in the formation of a conductive channel regionwithin a corresponding inorganic crystalline layer (e.g. 114A) which mayallow current to be conducted along the length of the channel regionbetween (first and second) contacts (e.g., 124A, 124B). The conductivechannel region may have a length extending between a first contact (e.g.124A) and a second contact (e.g. 124B), and may be formed in a portionof the crystalline layer (e.g. 114A) adjacent to the contacts (e.g.,124A, 124B). In embodiments, a first (e.g., positive) gate voltage(V_(GS)) may cause a current of electrons to flow between the contacts(e.g., 124A, 124B), and second (e.g., negative) gate voltage (V_(GS))may cause a current of holes to flow between the contacts (e.g., 124A,124B).

Thin-film crystalline layers (e.g., 114 A) of materials such as silicon,having thicknesses in a range between 5 nm and 20 μm may be flexible,i.e., able to be flexed without causing structural damage that may alterthe electrical characteristics/performance of the layer. The entire FETlayer structure (device) of embodiments including a flexible thin-filmcrystalline layer (e.g., 114A) formed on, or transferred to, a flexiblehandle substrate layer 116, may be flexible.

Contacts 124A-124D may be formed from a metal or other electricallyconductive material on a top surface of a dielectric layer (e.g. 120A).In certain embodiments, the (first and second) contacts may include ametal with a work function within a range of +/−25% of an intrinsicFermi energy of the channel region within the inorganic crystallinelayer (e.g., 114A). In certain embodiments the (first and second)contacts may include a metal with a work function between 4.2 electronvolts (eV) and 4.8 eV, which may include chromium.

The dielectric layers (120A, 120B) may include “high-κ” dielectricmaterial having a dielectric constant between 3.9 and 25. The high-κdielectric layers (120A, 120B) may be useful in limiting current leakage(and resulting power consumption) between the gate layer (122A, 122B)and the crystalline layers 114A, 114B. Dielectric layers (120A, 120B)may include materials such as hafnium silicate, zirconium silicate,hafnium dioxide and zirconium dioxide, which may be deposited usingatomic layer deposition. Gates 122A, 122B may be formed from a metal orother electrically conductive material on a top surface of a dielectriclayer (e.g. 120A).

If a first voltage that is low (approximately GND) is applied to V_(IN),both FETs 102 and 104 may operate as P-channel FETs; FET 102 (connectedto V_(DD)) may operate in a linear mode and FET 104 (connected to GND)may operate in a saturation mode. The resulting voltage drop across FET102 may be relatively small, as a larger proportion of the voltage dropis realized across FET 104, and the resulting output voltage (V_(OUT))may be high (approximately V_(DD)).

If a second voltage that is high (approximately V_(DD)) is applied toV_(IN), both FETs 102 and 104 may operate as N-channel FETs; FET 104 mayoperate in the linear mode and FET 102 may operate in a saturation mode.The resulting voltage drop across FET 104 may be relatively small, as alarger proportion of the voltage drop is realized across FET 102, andthe resulting output voltage (V_(OUT)) may be low (approximately GND).

FIG. 2 depicts a cross-sectional view 200 of two field-effecttransistors (FETs) 102, 104 formed on a buried insulator layer 112 andconfigured to provide ambipolar functionality in response to a gatevoltage V_(IN) applied to gate layers 122A, 122B, according toembodiments of the present disclosure consistent with FIG. 1. Thestructure, functionality, applications and manufacturing process of FETs102, 104 of FIG. 2 are generally consistent with those of FETs 102, 104of FIG. 1.

In certain embodiments, the inorganic crystalline layers (114A, 114B) ofFETs 102, 104 may be formed on or transferred to the top of a buriedinsulator layer 112. The buried insulator layer 112 may be formed on atop surface of a handle substrate layer 116. Buried insulator layer 112may be useful to electrically insulate an electrically conductive handlesubstrate layer 116 and/or a metal layer 118 from crystalline layers(e.g., 114A, 114B) of FETs 102, 104. In embodiments, the buriedinsulator layer 112 may include a buried oxide (BOX) layer, such assilicon dioxide (Sift), or various high-κ dielectrics such as siliconnitride, aluminum oxide and hafnium oxide. In embodiments, a thicknessof buried insulator layer 112 may range from 5 nm to 500 nm. In certainembodiments, a thicker or thinner buried insulator layer 112 may beused.

In embodiments, the handle substrate layer 116 may be a structurallyflexible and highly electrically conductive material (e.g., a highlydoped semiconductor such as silicon) or a deposited metal layer ormetallic foil.

In certain embodiments, metal layer 118 may be formed or attached to abottom surface of handle substrate layer 116. In embodiments thatinclude a highly conductive handle substrate layer 116, metal layer 118may not be included as part of the structure of FETs 102, 104. The metallayer 118 or highly conductive handle substrate layer 116 may beconfigured to, in response to a back bias voltage applied to the backbias 119 terminal, modify a (first) conductivity of the channel regionof the (first) FET 102 and modify a (second) conductivity of the channelregion of the (second) FET 102. A back bias voltage suitable formodifying FET channel conductivity may scale with a thickness of theburied insulator layer 112. For example, as a thickness of buriedinsulator layer 112 is increased, a greater back bias voltage may beapplied to terminal 119 to obtain a specified FET channel conductivity.Modifying FET conductivity may be useful in adjusting, tuning orenhancing ambipolar FET performance characteristics. In particular,modifying the FET channel conductivity may be useful in adjusting thethreshold voltage of the FET.

FIG. 3 depicts a cross-sectional view 300 of two field-effecttransistors (FETs) 302, 304 formed on a buried insulator layer 112 andconfigured to provide ambipolar functionality in response to a gatevoltage applied to the V_(IN) terminal (connected to metal layer 118),according to embodiments of the present disclosure generally consistentwith FIG. 2. The structure, applications and manufacturing process ofFETs 302, 304 of FIG. 3 are generally consistent with those of FETs 102,104 of FIG. 2.

Oxide (insulating) layers (e.g., 121A, 121B) may be formed or grown,between a (first) contact and a (second) contact (e.g., 124A, 124B,respectively), on a top surface and inorganic crystalline layer (e.g.,114A).

In certain embodiments, the inorganic crystalline layers (114A, 114B) ofFETs 102, 104 may be formed on or transferred to the top of a buriedinsulator layer 112. The buried insulator layer 112 may be formedbetween a top surface of a handle substrate layer 116 and the inorganiccrystalline layers (114A, 114B). Buried insulator layer 112 may beuseful to electrically insulate a handle substrate layer and/or a metallayer from crystalline layers (e.g., 114A, 114B) of FETs 302, 304. Inembodiments, the buried insulator layer may include a buried oxide (BOX)layer, such as silicon dioxide (SiO₂), or various high-κ dielectricssuch as silicon nitride, aluminum oxide and hafnium oxide. Inembodiments, a thickness of buried insulator layer 112 may range from 5nm to 500 nm. In certain embodiments, a thicker or thinner buriedinsulator layer 112 may be used.

In embodiments, the handle substrate layer 116 may be a structurallyflexible and highly electrically conductive material (e.g., a highlydoped semiconductor such as silicon) or a deposited metal layer ormetallic foil.

In certain embodiments, metal layer 118 may be included as part of thestructure of FETs 102, 104. In embodiments that include a highlyconductive handle substrate layer 116, metal layer 118 may not beattached to the bottom of handle substrate layer 116. The metal layer118 or highly conductive handle substrate layer 116 may be configuredto, in response to the application of a (first or second) gate voltageto the V_(IN) terminal, form conductive channel regions within theinorganic crystalline layers (e.g. 114A, 114B).

Forming conductive channel regions may allow current to be conductedalong the length of the channel region between (first and second)contacts (e.g., 124A, 124B or 124C, 124D). The conductive channel regionmay have a length extending between a first contact (e.g. 124A) and asecond contact (e.g. 124B), and may be formed in a portion of thecrystalline layer (e.g. 114A) adjacent to the buried insulator layer112. In embodiments, a first (e.g., positive) gate voltage applied tothe V_(GS) terminal may cause a current of electrons to flow between thecontacts (e.g., 124A, 124B), and second (e.g., negative) gate voltage(V_(GS)) may cause a current of holes to flow between the contacts(e.g., 124A, 124B).

An input voltage suitable for forming conductive channel regions withina crystalline layer may scale with a thickness of the buried insulatorlayer 112. For example, as a thickness of buried insulator layer 112 isincreased, a greater input voltage may be applied to terminal V_(IN) toobtain a specified channel conductivity, or current flow betweencontacts (e.g., 124A, 124B).

FIG. 4 depicts a cross-sectional view 400 of two field-effecttransistors (FETs) 302, 304 formed on a buried insulator layer 112 andconfigured to provide ambipolar functionality in response to a gatevoltage applied to a V_(IN) terminal connected to a patterned metallayer 118A, according to embodiments of the present disclosure generallyconsistent with FIG. 3. The structure, applications and manufacturingprocess of FETs 302, 304 of FIG. 3 are generally consistent with thoseof FETs 302, 304 of FIG. 3.

Buried insulator layer 112 may be formed between a top surface of ahandle substrate layer 116, a top surface of the patterned metal layer118A and the inorganic crystalline layers (114A, 114B). Buried insulatorlayer 112 may be useful to electrically insulate the patterned metallayer 118A from crystalline layers (e.g., 114A, 114B) of FETs 302, 304.

In embodiments, the handle substrate layer 116 may be a structurallyflexible and electrically insulative material such as plastic,commercial photo paper or ultra-thin (i.e., 100 μm) flexible glass.

In certain embodiments, patterned metal layer 118A may be formed on orattached to a bottom surface of buried insulator layer 112, and handlesubstrate layer 116 may be subsequently formed on bottom surfaces ofboth buried insulator layer 112 and patterned metal layer 118A. Incertain embodiments, the patterned metal layer 118A may be patterned tooverlap a channel region formed in a crystalline layer (e.g., 114A),between the (first) contact and the (second) contact (e.g., 124A, 124B),respectively.

Patterning of metal layer 118A may reduce a spatial overlap, andresulting capacitance between the patterned metal layer 118A (which mayact as a FET gate) and the contacts (e.g., 124A, 124B or 124C, 124D),which may improve high-frequency response of FET 302 or 304,respectively. In certain embodiments, patterned metal layer 118A mayoverlap the contacts (e.g., 124A, 124B), to increase conductivity of achannel regions within the inorganic crystalline layers (e.g. 114A,114B).

In certain embodiments, patterned metal layer 118A may not overlap thecontacts (e.g., 124A, 124B), in order to increase the high-frequencyresponse of FET 302 or 304. In embodiments, voltage terminal V_(IN) maybe connected to patterned metal layer 118A through an insulated via orother connecting structure. The patterned metal layer 118A may beconfigured to, in response to the application of a (first or second)gate voltage to the V_(IN) terminal, form a conductive channel regionwithin each of the inorganic crystalline layers (e.g. 114A, 114B).

An input voltage suitable for forming conductive channel regions withina crystalline layer may scale with a thickness of the buried insulatorlayer 112. For example, as a thickness of buried insulator layer 112 isincreased, a greater input voltage may be applied to terminal V_(IN) toobtain a specified channel conductivity, or current flow betweencontacts (e.g., 124A, 124B).

FIG. 5 includes eight cross-sectional views (501 through 508)illustrating the results of a sequential set of process steps formanufacturing an ambipolar logic field-effect transistor (FET) device(e.g., 102, 104, FIG. 1), according to embodiments of the presentdisclosure consistent with the figures. These views illustrate anexample process; other views and steps may be possible.

The results of one or more process steps may be depicted in each view.For example, a view may depict the results of growing a contact layer(e.g., 124), which may include related photo masking, exposure andetching steps. Processing steps associated with views 501 through 508may include, but are not limited to metallic deposition, layer growth,layer deposition, layer separation, layer transfer, and doping ofcrystalline structures.

The progression depicted in views 501 through 508 begins with a handlesubstrate layer 116 (view 501) and ends with a completed ambipolar FETdevice (view 508). For simplicity of illustration, completed structuresare generally shown in the views as having rectangular cross-sectionalprofiles, with surfaces orthogonal to each other. This depiction,however, is not limiting; structures may be of any suitable shape, sizeand profile, in accordance with specific design criteria, lithographicand manufacturing process limitations and tolerances for a givenapplication. For example, corners shown as having right angles may berounded, surfaces may have a non-orthogonal relative orientation, andrelative dimensional ratios may vary from those depicted in the figures.Views 501 through 508 illustrate the process of manufacturing a singleambipolar FET device, however, in embodiments, a plurality of FETs maybe simultaneously manufactured on the same handle substrate layer 116.

View 501 depicts a handle substrate layer 116, having a generally planarshape and top and bottom surfaces. The handle substrate layer 116 may bea relatively cost-effective, thin and flexible material such as plasticor metal foil. In certain embodiments, handle substrate layer 116 may beelectrically insulative, and in particular embodiments handle substratelayer 116 may be electrically conductive.

View 502 depicts the result of forming a buried insulator layer 112 onthe top surface of handle substrate layer 116. In certain embodiments,the buried insulator layer 112 may be a buried oxide (BOX) such assilicon dioxide (Sift). In certain embodiments, the buried insulatorlayer may be a “high-κ” dielectric material, such as hafnium silicate,zirconium silicate, hafnium dioxide and zirconium dioxide, which may bedeposited using atomic layer deposition. The buried insulator layer 112may be useful for electrically insulating a crystalline layer from alayer which may be conductive, such as a handle substrate layer or metallayer, which may be formed on a bottom surface of the buried insulatorlayer 112.

View 503 depicts the result of forming a thin crystalline layer 114 on,or transferring a thin crystalline layer 114 to, the top surface of theburied insulator layer 112.

In certain embodiments the thin-film inorganic crystalline layer 114 maybe grown on a crystalline host substrate. In embodiments the hostsubstrate may be an inorganic, elemental semiconductor such as silicon,and in certain embodiments the host substrate may include an inorganicsemiconductors such III-V and II-IV elements. In certain embodiments,thin-film crystalline layer 114 may be a mono-crystalline structure.

Following the growth of the thin-film crystalline layer 114, layer 114may then be separated from the crystalline host substrate using layertransfer techniques which may include but are not limited to acontrolled spalling process, an epitaxial layer lift-off process, and asmart-cut process. The thin crystalline layer 114 may then be bondedonto the buried insulator layer 112 using known bonding techniques suchas direct (chemical) bonding, eutectic bonding, adhesive bonding orplasma activated bonding.

In particular embodiments, a thin, inorganic, non-crystalline layer(e.g., 114) may be deposited on the top surface of the buried insulatorlayer 112. The non-crystalline layer may be subsequently crystallizedusing a crystallization technique which may include, but is not belimited to, laser crystallization, solid-phase crystallization andmetal-induced crystallization. In certain embodiments a crystallinelayer 114 may be deposited on the buried insulator layer 112 using achemical vapor deposition (CVD) technique. In certain embodiments,thin-film crystalline layer 114 may be a multi-crystalline structure.

View 504 depicts the result of depositing a metal layer 118 on a bottomsurface of the handle substrate layer 116. According to embodiments,metallic layer 118 may be a deposited (electroplated or sputtered) metalsuch as aluminum, or may be a foil layer attached to handle substratelayer 116, for example, by thermal bonding or adhesives. Metal layer 118may be useful for back biasing or acting as a gate structure for anambipolar FET device.

View 505 depicts the result of doping the crystalline layer 114. Incertain embodiments, crystalline layer 114 may be doped during itsformation, before growth on or transfer to buried insulator layer 112,as depicted in view 503. In certain embodiments the crystalline layer114 may be doped prior to view 505. Dopants may include P type (e.g.,boron, gallium) or N type (e.g., phosphorus, arsenic) elements, and maybe diffused into the crystalline layer 114 with a concentrationsufficient to allow a conductive channel to be created, in the presenceof a gate voltage on a gate layer, in the crystalline layer 114.

View 506 depicts the result of forming contacts 124 on a top surface ofthe inorganic crystalline layer 114. First and second electricallyconductive contacts 124 may be fabricated from metal or anotherelectrically conductive material. In certain embodiments, the forming ofcontacts 124 may include hydrogen termination of the top surface of theinorganic crystalline layer 114 and a metal evaporation processperformed in a vacuum chamber. In particular embodiments the contacts124 may include chromium.

Contacts 124 may be connected to a voltage or current source and may beused to inject carriers (electrons or holes) into the channel region inthe crystalline layer 114, which may then flow from (a first) contact124, through the channel region, to (a second) contact 124.

View 507 depicts the result of depositing a dielectric layer 120 the topsurface of the inorganic crystalline layer 114, between the contacts124. Dielectric layer 120 may include “high-κ” dielectric materials,which may have a dielectric constant between 3.9 and 25, and which maybe useful in limiting current leakage (and resulting power consumption)between a gate layer and the crystalline layer 114. Dielectric layer 120may include materials such as hafnium silicate, zirconium silicate,hafnium dioxide and zirconium dioxide, which may be deposited usingatomic layer deposition.

View 508 depicts the result of depositing, on a top surface of thedielectric layer 120, and between the (first) electrically conductivecontact and the (second) electrically conductive contact, anelectrically conductive material, to form a gate layer 122. Applicationof a (first) gate voltage to the gate layer 122 may cause a current ofelectrons, as a majority carrier, to be conducted, along a length of achannel region between the first contact and the second contact.Application of a (second) gate voltage to the gate layer 122 may cause acurrent of holes, as a majority carrier, to be conducted, along a lengthof a channel region between the first contact and the second contact.

Specified and actual finished dimensions of structures depicted in views501 through 508 may be generally constrained by design needs,manufacturing and process tolerances, and availability of materialshaving certain dimensions.

FIG. 6 is a flow diagram illustrating steps for manufacturing ambipolarlogic devices 600, according to embodiments consistent with the figures.The method for manufacturing ambipolar logic devices 600 may be usefulfor providing a cost-effective process for creating inorganic thin-filmflexible electronic devices on a flexible substrate. The process 600moves from start 602 to operation 604.

Operation 604 generally refers to the process steps that involve forminga buried insulator layer on a handle substrate, which may correspond tothe view provided by 502 (FIG. 5) and its associated description. Aburied insulator layer may be used to electrically insulate acrystalline layer from a conductive handle substrate layer or a metallayer. The buried insulator layer may include a buried oxide (BOX) suchas silicon dioxide (SiO₂) or a high-κ dielectric material. A buriedinsulator layer may be formed or deposited by processes includingoxidation of an existing layer, such as crystalline silicon, or atomiclayer deposition (ALD). Once a buried insulator layer (112, view 505)has been formed on a handle substrate, the process moves to operation606.

Operation 606 generally refers to the process steps that involve forminga crystalline layer (114, view 503) on, or transferring a crystallinelayer to, the buried insulator layer (112, view 503), which maycorrespond to the views provided by 503 (FIG. 5) and their associateddescriptions. In certain embodiments a thin crystalline layer may betransferred from a host substrate onto the buried insulator layer (112,view 503). In certain embodiments a non-crystalline material may bedeposited onto the buried insulator and subsequently crystallized asdescribed in reference to view 503, FIG. 5. In certain embodiments, thehost substrate may be chosen to have a sufficient level of doping sothat no additional doping is necessary after the layer transferoperation. Once a crystalline layer has been formed on or transferred tothe buried insulator layer, the process moves to operation 608.

Operation 608 generally refers to the process steps that involvedepositing a metallic layer on a bottom surface of the handle substrate,which may correspond to the views provided by 504, 505 (FIG. 5) andtheir associated descriptions. In certain embodiments, a metallic layermay be useful as a gate structure (layer) to control current flowbetween contacts of an ambipolar FET device. In certain embodiments, ametallic layer may be useful as an electrical structure through which toapply an electric field to back bias (adjust operating characteristicsof) an ambipolar FET device. In certain embodiments, a patternedmetallic layer may be deposited between the handle substrate layer andthe buried insulator layer, and used as a gate structure to control anambipolar FET device. Once the metallic layer has been deposited on thebottom surface of the handle substrate, the process moves to operation610.

Operation 610 generally refers to the process steps that involve forminga first and a second contact on the top surface of the crystallinelayer, which may correspond to the views provided by 506 (FIG. 5) andtheir associated descriptions. Contacts may be formed by evaporating, ina vacuum, a metal which is then deposited in contact areas. The topsurface of the inorganic crystalline layer may be prepared for contactforming through a process of hydrogen termination. In certainembodiments, the contacts may include chromium. Once a first and asecond contact have been formed, the process moves to operation 612.

Operation 612 generally refers to the process steps that involvedepositing a dielectric layer onto the crystalline layer, which maycorrespond to the views provided by 507 (FIG. 5) and their associateddescriptions. A dielectric layer may be used to electrically insulate acrystalline layer from a gate layer and may include a buried oxide (BOX)such as silicon dioxide (SiO₂) or a high-κ dielectric material. Adielectric layer may be formed or deposited by processes includingoxidation of an existing layer, such as crystalline silicon, or atomiclayer deposition (ALD). Once the dielectric layer has been deposited onthe crystalline layer, the process moves to operation 614.

Operation 614 generally refers to the process steps that involvedepositing a conductive gate material on the dielectric layer, which maycorrespond to the views provided by 508 (FIG. 5) and their associateddescriptions. The gate material may include a metal or otherelectrically conductive material which is chemically and electricallycompatible with the dielectric material. The gate may be formed byevaporating, in a vacuum, a metal which is then deposited on top of thedielectric layer. Once a conductive gate material has been deposited onthe dielectric layer, the process 600 may end at block 616.

The descriptions of the various embodiments of the present disclosurehave been presented for purposes of illustration, but are not intendedto be exhaustive or limited to the embodiments disclosed. Manymodifications and variations will be apparent to those of ordinary skillin the art without departing from the scope and spirit of the describedembodiments. The terminology used herein was chosen to explain theprinciples of the embodiments, the practical application or technicalimprovement over technologies found in the marketplace, or to enableothers of ordinary skill in the art to understand the embodimentsdisclosed herein.

What is claimed is:
 1. A method for manufacturing an ambipolar FET(field-effect transistor) device, the method comprising: forming aburied insulator layer on a handle substrate layer; forming an inorganiccrystalline layer on the buried insulator layer; depositing a metalliclayer on a bottom surface of the handle substrate layer; forming a firstelectrically conductive contact and a second electrically conductivecontact on a top surface of the inorganic crystalline layer; depositinga dielectric layer on a top surface of the inorganic crystalline layer;and depositing an electrically conductive material between the firstelectrically conductive contact and the second electrically conductivecontact, to form a metal layer that is configured to function as a gateof the ambipolar FET by: causing, in response to a first gate voltageand using electrons as a majority carrier, current to be conducted,along a length of a channel region between a first contact and a secondcontact; causing, in response to a second gate voltage and using holesas a majority carrier, current to be conducted, along the length of thechannel region between the first contact and the second contact.
 2. Themethod of claim 1, wherein forming an inorganic crystalline layer on theburied insulator layer includes depositing a non-crystalline materiallayer onto the buried insulator layer and crystallizing thenon-crystalline material layer.
 3. The method of claim 1, whereinforming an inorganic crystalline layer on the buried insulator layerincludes transferring an inorganic crystalline layer from a hostsubstrate onto the handle substrate layer.
 4. The method of claim 1,wherein forming a first electrically conductive contact and a secondelectrically conductive contact includes hydrogen termination of the topsurface of the inorganic crystalline layer.
 5. The method of claim 4,wherein forming a first electrically conductive contact and a secondelectrically conductive contact involves a metal evaporation processperformed in a vacuum chamber.